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PD - 97442A
AUTOMOTIVE GRADE
* Advanced Process Technology * Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications * Exceptionally Small Footprint and Low Profile * High Power Density * Low Parasitic Parameters * Dual Sided Cooling * 175C Operating Temperature * Repetitive Avalanche Capability for Robustness and Reliability * Lead free, RoHS and Halogen free
AUIRF7739L2TR AUIRF7739L2TR1
V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) Qg 40V 700 1000 270A 220nC
Automotive DirectFET(R) Power MOSFET
Applicable DirectFET Outline and Substrate Outline
SB SC M2 M4
L8
DirectFET ISOMETRIC
L4
L6
L8
Description
The AUIRF7739L2TR(1) combines the latest Automotive HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFET (R) packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET(R) Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET packaging platform coupled with the latest silicon technology allows the AUIRF7739L2TR(1) to offer substantial system level savings and performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25C ID @ TC = 100C ID @ TA = 25C ID @ TC = 25C IDM PD @TC = 25C PD @TA = 25C EAS EAS (tested) IAR EAR TP TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ Continuous Drain Current, VGS @ Continuous Drain Current, VGS @ Continuous Drain Current, VGS @
Max.
40 20 270 190 46 375 1070 125 3.8 270 160 See Fig.12a, 12b, 15, 16 270 -55 to + 175
Units V
Pulsed Drain Current Power Dissipation Power Dissipation Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche CurrentAg Repetitive Avalanche Energy Peak Soldering Temperature Operating Junction and Storage Temperature Range
f e
f
10V (Silicon Limited)f 10V (Silicon Limited)f 10V (Silicon Limited)e 10V (Package Limited)
A
W mJ A mJ C
g
h
g
Thermal Resistance
Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Can Junction-to-PCB Mounted Linear Derating Factor
RJA RJA RJA RJCan RJ-PCB
fl
e j k
Parameter
Typ.
--- 12.5 20 --- --- 0.83
Max.
40 --- --- 1.2 0.5
Units
C/W
f
W/C
HEXFET(R) is a registered trademark of International Rectifier.
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AUIRF7739L2TR/TR1
Static Characteristics @ TJ = 25C (unless otherwise stated)
Parameter
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) VGS(th)/TJ gfs RG IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Forward Transconductance Gate Resistance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min.
40 --- --- 2.0 --- 280 --- --- --- --- ---
Typ.
--- 0.008 700 2.8 -6.7 --- 1.5 --- --- --- ---
Max.
--- --- 1000 4.0 --- --- --- 5.0 250 100 -100
Units
Conditions
V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA VGS = 10V, ID = 160A V VDS = VGS, ID = 250A
i
mV/C VDS = 10V, ID = 160A S A VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125C VGS = 20V nA VGS = -20V
Dynamic Characteristics @ TJ = 25C (unless otherwise stated)
Parameter
Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min.
--- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ.
220 46 19 81 74 100 83 21 71 56 42 11880 2510 1240 8610 2230 3040
Max.
330 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Units
Conditions
VDS = 20V, VGS = 10V ID = 160A
nC
See Fig. 11
nC ns
VDS = 16V, VGS = 0V VDD = 20V, VGS = 10VAi ID = 160A RG = 1.8 VGS = 0V VDS = 25V
pF
= 1.0MHz VGS = 0V, VDS = 1.0V, f=1.0MHz VGS = 0V, VDS = 32V, f=1.0MHz VGS = 0V, VDS = 0V to 32V
Diode Characteristics @ TJ = 25C (unless otherwise stated)
IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ag Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. --- --- --- --- --- Typ. --- --- --- 87 250 Max. 110 1070 1.3 130 380 V ns nC Units A Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS = 160A, VGS = 0V IF = 160A, VDD = 20V
i
di/dt = 100A/s
i
Surface mounted on 1 in. square Cu (still air).
Mounted to a PCB with small clip heatsink (still air)
Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air)
Notes through are on page 10
2
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AUIRF7739L2TR/TR1
Qualification Information
Automotive (per AEC-Q101) Qualification Level
Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. DFET2 Class B AEC-Q101-002 Class 2 AEC-Q101-001 Charged Device Model Class IV AEC-Q101-005 Yes MSL1
Moisture Sensitivity Level Machine Model Human Body Model
ESD
RoHS Compliant
Qualification standards can be found at International Rectifiers web site:
http://www.irf.com
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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AUIRF7739L2TR/TR1
1000
TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
1000
TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
10
100
60s PULSE WIDTH
Tj = 175C
1
60s PULSE WIDTH
Tj = 25C 4.5V
4.5V 10
0.1 0.1 1 10 100 1000 V DS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
RDS(on) , Drain-to -Source On Resistance (m)
Fig 2. Typical Output Characteristics
RDS (on) , Drain-to-Source On Resistance (m )
10 ID = 160A 8
0.93 0.92 0.91 0.90 0.89 0.88 0.87 0.86 0.85 0
VGS = 10V
6
4
2 T J = 25C 5.0 5.5 6.0 6.5
T J = 125C
0
7.0
7.5
8.0
40
80
120
160
200
VGS, Gate -to -Source Voltage (V)
ID , Drain Current (A)
Fig 3. Typical On-Resistance vs. Gate Voltage
1000
Fig 4. Typical On-Resistance vs. Drain Current
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current (A)
ID = 160A VGS = 10V
100 T J = 175C 10 T J = 25C
1.5
1.0
1 VDS = 25V 60s PULSE WIDTH 2 3 4 5 6 7 8
0.1
0.5 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 5. Typical Transfer Characteristics
Fig 6. Normalized On-Resistance vs. Temperature
4
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AUIRF7739L2TR/TR1
5.0
VGS(th) , Gate threshold Voltage (V)
1000
4.5
ISD, Reverse Drain Current (A)
4.0 3.5 3.0 2.5 2.0 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( C )
TJ = 175C 100
ID = 250A ID = 1.0mA ID = 1.0A
10
T J = 25C
VGS = 0V 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Threshold Voltage vs. Junction Temperature
150
Gfs, Forward Transconductance (S)
Fig 8. Typical Source-Drain Diode Forward Voltage
100000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
125 100 75 50 25 0 0 25 50
T J = 25C
C, Capacitance (pF)
T J = 175C
10000
Ciss Coss Crss
V DS = 10V 20s PULSE WIDTH 1000 75 100 125 150 1
10 VDS, Drain-to-Source Voltage (V)
100
ID,Drain-to-Source Current (A)
Fig 9. Typical Forward Transconductance vs. Drain Current
14.0 ID= 160A
VGS, Gate-to-Source Voltage (V)
Fig 10. Typical Capacitance vs.Drain-to-Source Voltage
300 250
ID, Drain Current (A)
12.0 10.0 8.0 6.0 4.0 2.0 0.0 0 50
VDS= 32V VDS= 20V
200 150 100 50 0
100
150
200
250
300
25
50
75
100
125
150
175
QG, Total Gate Charge (nC)
T C , Case Temperature (C)
Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage
Fig 12. Maximum Drain Current vs. Case Temperature
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AUIRF7739L2TR/TR1
10000 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100sec 1100
EAS , Single Pulse Avalanche Energy (mJ)
1000 900 800 700 600 500 400 300 200 100 0 25 50 75 100
ID, Drain-to-Source Current (A)
ID 29A 46A BOTTOM 160A TOP
100 DC 10 Tc = 25C Tj = 175C Single Pulse 1 0 1 10msec
1msec
10
100
125
150
175
VDS, Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (C)
Fig 13. Maximum Safe Operating Area
10
Thermal Response ( Z thJC ) C/W
Fig 14. Maximum Avalanche Energy vs. Temperature
1
D = 0.50 0.20 0.10 0.05 0.02 0.01
J J 1
0.1
R1 R1 2
R2 R2
R3 R3 3
R4 R4 C 4
Ri (C/W)
0.1080 0.6140 0.4520 1.47e-05
0.000171 0.053914 0.006099
i (sec)
0.01
1
2
3
4
0.001
SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i/Ri
0.036168
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 1
0.0001 1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
Avalanche Current (A)
100
Allowed avalanche Current vs avalanche pulsewidth, tav, assumingTj = 150C and Tstart =25C (Single Pulse)
0.01 0.05 0.10
10
1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C. 0.1 1.0E-06 1.0E-05 1.0E-04 tav (sec) 1.0E-03 1.0E-02 1.0E-01
Fig 16. Typical Avalanche Current vs.Pulsewidth
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AUIRF7739L2TR/TR1
300 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (C)
Fig 17. Maximum Avalanche Energy vs. Temperature
EAR , Avalanche Energy (mJ)
TOP Single Pulse BOTTOM 1.0% Duty Cy cle ID = 160A
Notes on Repetitive Avalanche Curves , Figures 13, 14: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
20V
D.U.T
IAS tp
+ - VDD
VGS
A
0.01
I AS
Fig 18a. Unclamped Inductive Test Circuit
Fig 18b. Unclamped Inductive Waveforms
Id Vds Vgs
L
0
DUT
20K 1K
S
VCC
Vgs(th)
Qgodr
Qgd
Qgs2 Qgs1
Fig 19a. Gate Charge Test Circuit
VDS VGS RG 10V
Pulse Width 1 s Duty Factor 0.1 %
Fig 19b. Gate Charge Waveform
VDS 90%
RD
D.U.T.
+
-
VDD
10% VGS
td(on) tr t d(off) tf
Fig 20a. Switching Time Test Circuit
Fig 20b. Switching Time Waveforms
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AUIRF7739L2TR/TR1
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
*
* * * *
dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
**
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 21. Diode Reverse Recovery Test Circuit for HEXFET(R) Power MOSFETs
Automotive DirectFET Board Footprint, L8 (Large Size Can).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
G = GATE D = DRAIN S = SOURCE D D
S S
S S
D
G S S S S
D
D
D
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
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AUIRF7739L2TR/TR1
Automotive DirectFET Outline Dimension, L8 Outline (LargeSize Can).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
Automotive DirectFET Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
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AUIRF7739L2TR/TR1
Automotive DirectFET Tape & Reel Dimension (Showing component orientation).
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
Notes:
Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25C, L = 0.021mH, RG = 25, IAS = 160A. Pulse width 400s; duty cycle 2%. Used double sided cooling, mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
R is measured at TJ of approximately 90C.
10
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AUIRF7739L2TR/TR1
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the "AU" prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR's terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR's standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically designated by IR as military-grade or "enhanced plastic." Only products designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation "AU". Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR's Technical Assistance Center http://www.irf.com/technical-info/
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
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